The efficiency and power density advantages of GaN are essential in meeting global energy goals without increasing costs. Global energy consumption is rising, driven by population growth and economic ...

The Sommerfeld model represents a decisive step forward compared to the Drude-Lorentz model. To repeat the experiment proposed in the previous tutorial (measurement of the effective mass of electrons ...

Power Integrations Launches 1700 V GaN Switcher IC. With a voltage of 1700 V, this marks a notable improvement over earlier 900 V and 1250 V devices released in 2023. Today Power Integrations ...

The global SiC market is set to grow steadily, which is the main reason why it is getting more and more competitive. Over the last few years, the SiC market has experienced phenomenal growth, mainly ...

The input voltage range of the Variable Step Down MicroModule from 3.5 to 60 V now covers bus voltages from 5 to 48 V. Würth Elektronik has introduced a new generation of MagI³C-VDMM power modules.

Infineon’s strategy of renewing the power electronics market on both fronts, from silicon to wide bandgap, by taking full advantage of the potential of global decarbonization and digitization trends ...

This tutorial will propose an experiment based on Cyclotron Resonance to measure the effective mass of electrons and holes in a semiconductor. In the previous work, we determined the mobility of ...

Here’s a RoundUp of this week’s must-read articles – we’ll delve into the latest developments on GaN Production, WBG Materials in 5G, and PFC Circuits! Here’s a RoundUp of this week’s must-read ...

The new GaN power discretes provide improved figures of merit to ensure competitive switching performance in focus applications. Infineon Technologies AG has introduced a new family of high-voltage ...

This next-generation power supply achieves 98% efficiency with high-power GaNSafe™ and Gen-3 Fast SiC™ MOSFETs for AI and hyperscale data centers. Navitas Semiconductor has introduced the world’s ...

The measurement of voltage, current and the switching transitions each present their own challenges. At high voltages, the risk of injury and equipment damage increases. High-voltage floating-node ...

The initial efforts of this collaboration will focus on silicon carbide (SiC) MOSFETs in QDPAK for onboard chargers. Nexperia has announced a strategic cooperation with KOSTAL, a prominent automotive ...