The diode family perfectly matches the CoolSiC MOSFETs 2000V in the TO-247Plus-4 HCC package, which the company launched in the spring of 2024. In addition to the TO-247-2 package, the diode is also ...

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

Sequoia Financial Advisors LLC purchased a new stake in Diodes Incorporated (NASDAQ:DIOD – Free Report) in the 4th quarter, ...

Atria Investments Inc reduced its holdings in shares of Diodes Incorporated (NASDAQ:DIOD – Free Report) by 15.7% in the 4th ...

Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...

The SiC Schottky diode in a TO-247-2 package simplifies design transitions, reduces component count, and enhances system ...

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, which is pin-compatible with most existing TO-247-2 packages. The product ...