The SiC Schottky diode in a TO-247-2 package simplifies design transitions, reduces component count, and enhances system ...

Sequoia Financial Advisors LLC purchased a new stake in Diodes Incorporated (NASDAQ:DIOD – Free Report) in the 4th quarter, ...

Atria Investments Inc reduced its holdings in shares of Diodes Incorporated (NASDAQ:DIOD – Free Report) by 15.7% in the 4th ...

The use of an anti-parallel Schottky barrier diode (SBD) can improve the performance and reliability of silicon carbide MOSFETs in power conversion applications. In this article, we will showcase ...

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

The diode family perfectly matches the CoolSiC MOSFETs 2000V in the TO-247Plus-4 HCC package, which the company launched in the spring of 2024. In addition to the TO-247-2 package, the diode is also ...

Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, which is pin-compatible with most existing TO-247-2 packages. The product ...

Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.