ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part-II: Modeling of Charge Trapping
Abstract: Because of charge trapping in GaN HEMTs, dc characteristics of these devices are not representative of high-frequency operation. The advanced spice model GaN model presented in Part I of ...
Lennox International Inc. (LII), headquartered in Richardson, Texas, designs, manufactures, and markets products for the ...
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