Abstract: We report 50 GSamples/s track-hold amplifier (THA) and sample-hold amplifier (SHA) designed and fabricated in a 250 nm InP double heterojunction bipolar transistor (DHBT) technology. Because ...
Abstract: This paper presents the use of a kelvin-emitter resistor as a junction temperature sensor in IGBTs. The kelvin-emitter resistor is placed directly on the IGBT die surface. The resistance is ...
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