GIDL is primarily caused by band-to-band tunneling (BTBT) at the drain junction under high electric field conditions. This ...

Latest editions said to offer industry’s best figure of merit. Single- and dual-output, automotive-grade devices target wide ...

With more than six billion units sold around the world, TinySwitch ICs are widely used in bias and auxiliary supplies in ...

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging ...

With an increasing number of demanding applications and the need for seamless multitasking, especially for enthusiasts, ...

Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...

The AO4606 integrates two powerful N-channel and P-channel MOSFETs to create a complete H-bridge circuit. This innovative design simplifies circuit layouts while enhancing integration and reliability.

Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...

In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...

Thus, we represent the subjective bias between LC-MOS and LA-MOS, and the model bias between IQA predictions learned from LC-MOS and LA-MOS (i.e., dual-bias) as two latent variables with unknown ...

To address these limitations and effectively capture the intricate dependencies between learning behaviors and exercises, this paper introduces a novel approach: Dual-Channel Knowledge Tracing with ...