Traditionally, silicon-based power devices such as Insulated Gate Bipolar Transistors (IGBTs ... and short-circuit protection circuits. The transition from silicon to WBG power devices represents a ...

However, building complete integrated circuits with such atomic-level precision has long been hindered by challenges in maintaining accuracy and uniformity at scale. Until now, the highest integration ...

ROHM has developed the new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for PFC and LLC converters ...

A layered transistor design combines light detection optical memory and neuromorphic processing in one unit offering compact ...

Combining a buck-boost topology and Silent Switcher technology brings very low EMI at the highest power-conversion efficiency ...

ROHM Semiconductor announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for ...

To support the rapid growth of electric vehicles, Infineon has introduced a new generation of energy-efficient silicon IGBTs ...