Electronics Weekly24d
600V 24mΩ super-junction mosfet in TO-247
Toshiba has announced a 600V super-junction mosfet with a maximum on-resistance of 24mΩ in a TO-247 package (20mΩ typ). Typical gate-drain charge is 37nC (400Vd, 10Vg, 80A) and total gate charge (gate ...
New Electronics7d
Magnachip expands product line-up with 25 new Gen6 SJ MOSFETS
Magnachip Semiconductor has announced a significant expansion of its product line-up with the launch of 25 new 6th-generation ...
CIE – Components in Electronics9d
New Toshiba 600V 24mΩ MOSFET improves power supply efficiency
Toshiba has launched an N-channel power MOSFET to address the growing market demand for improved efficiency in power supply ...
IEEE11d
Fully Depleted Silicon-On-Insulator MOSFET pH Sensor With n/p-Si Junction Channel Induced Super-Nernstian Sensitivity and Low Power
Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=19 ...
Magnachip Introduces 25 New Gen6 SJ MOSFETS to Expand Power Product Lineup for AI, Industrial Applications and Smart Home Appliances
Magnachip Semiconductor Corporation ("Magnachip" or "Company") (NYSE: MX) announced a significant expansion of its product ...
Electronics Weekly15d
Rad-tolerant p-channel mosfet for space
Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO ... salt atmosphere tests are included as part of the qualification”. Junction to case ...
Electronic Products13h
NoMIS Power advances SiC MOSFET technology
NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...
Morningstar9d
Magnachip Introduces 25 New Gen6 SJ MOSFETS to Expand Power Product Lineup for AI, Industrial Applications and Smart Home Appliances
- Introducing 25 new Gen6 SJ MOSFETs with improved specific on-resistance (RSP), faster switching speeds and enhanced electrostatic discharge (ESD) protection Magnachip Semiconductor Corporation ...