IEEE

Germanium Doped SnO₂: An Exploratory Channel Material for High On–Off Current Ratio and Low Subthreshold Slope in n-Type SnO₂:Ge Thin Film Transistor

Abstract: We report germanium (Ge) doping in tin oxide (SnO2), which led to achieving a record ON–OFF current ratio of ~109 and a subthreshold slope (SS) of 77 mV/decade in a bottom-gated n-type ...
C&EN

Enhanced Performance of Aprotic Electrolyte Li–O2 Batteries with SnS2–SnO2/C Heterostructure as Efficient Cathode Catalyst

Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai 200090, China Department of Chemical Engineering, Shanghai ...