The AO4606 integrates two powerful N-channel and P-channel MOSFETs to create a complete H-bridge circuit. This innovative design simplifies circuit layouts while enhancing integration and reliability.

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...

Latest editions said to offer industry’s best figure of merit. Single- and dual-output, automotive-grade devices target wide ...

With an increasing number of demanding applications and the need for seamless multitasking, especially for enthusiasts, ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging ...

Housed in a small SO8L package, Toshiba’s TLP5814H gate driver photocoupler provides an active Miller clamp for driving SiC ...

GIDL is primarily caused by band-to-band tunneling (BTBT) at the drain junction under high electric field conditions. This ...

Now, a research team, led by Masato Kotsugi from the Department of Material Science and Technology at Tokyo University of ...

In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...

Open Cosmos and i2CAT have announced the launch of Europe’s first Low Earth Orbit (LEO) lab for R&D in non-terrestrial networks (NTN), The mission involves the 6GStarLab, a satellite designed to ...

With more than six billion units sold around the world, TinySwitch ICs are widely used in bias and auxiliary supplies in ...