Toshiba has announced a 600V super-junction mosfet with a maximum on-resistance of 24mΩ in a TO-247 package (20mΩ typ). Typical gate-drain charge is 37nC (400Vd, 10Vg, 80A) and total gate charge (gate ...
Magnachip Semiconductor has announced a significant expansion of its product line-up with the launch of 25 new 6th-generation ...
- Introducing 25 new Gen6 SJ MOSFETs with improved specific on-resistance (RSP), faster switching speeds and enhanced electrostatic discharge (ESD) protection Magnachip Semiconductor Corporation ...
Toshiba has launched an N-channel power MOSFET to address the growing market demand for improved efficiency in power supply ...
Infineon is introducing a radiation-tolerant p-channel plastic-packged power mosfet for low-earth-orbit (LEO ... salt atmosphere tests are included as part of the qualification”. Junction to case ...
Magnachip Semiconductor Corporation (“Magnachip” or “Company”) (NYSE: MX) announced a significant expansion of its product ...