The SiC Schottky diode in a TO-247-2 package simplifies design transitions, reduces component count, and enhances system ...
Researchers from Singapore’s Nanyang Technological University and its Agency for Science, Technology and Research are ...
has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes, designed for high-frequency applications where speed and efficiency are critical. The devices ...
It is the second course in the "Semiconductor Power Device" specialization that focusses on diodes, MOSFETs, and IGBTs but also covers legacy devices (BJTs, Thyristors and TRIACS) as well as ...
Vishay Intertechnology Launches New High-Efficiency 650 V and 1200 V Silicon Carbide Schottky Diodes
Inc. has announced the introduction of 16 new silicon carbide (SiC) Schottky diodes available in 650 V and 1200 V ratings, housed in the SOT-227 package. Designed for high-frequency applications ...
In addition, Vishay will provide a portfolio roadmap for 650 V to 1,700 V SiC MOSFETs with on-resistances ranging from 10 mΩ to 560 Ω. Vishay’s SiC platform is based on a proprietary MOSFET technology ...
Vishay Intertechnology, Inc. (NYSE: VSH) is set to highlight its latest advancements in power electronics at the Applied ...
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