Electronic Design7d
New Power Module Integrates SiC MOSFETs and IGBTs to Cut EV Costs
In power electronics, silicon carbide beats silicon in most of the metrics that count, except cost. Infineon is trying to ...
Compound Semiconductor3d
GaN-IGBT combo targets EV powertrains over 100kW
Cambridge GaN Devices (CGD) has revealed more details about a solution that will enable the company to address EV powertrain ...
University of Bristol4mon
Active gate driving of IGBTs
Silicon power electronic devices such as IGBTs and MOSFETs can also be controlled via the gate. Here less speed is required, e.g. 120 MHz arbitrary waveform generation is adequate. Therefore, it can ...
Electronics Weekly2d
APEC: small GaN transistors improve EV IGBT traction inverters
Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...
Electronics Weekly7d
TDK shrinks 500V gate drive transformers to 11 x 13mm
TDK has shrunk its 500V gate drive transformers to 11 x 13mm and 11mm high, smaller than its existing E10EM series. The new ...
TMCnet3d
CGD Announces Breakthrough 100Kw+ Technology Enabling GaN to Address $10B+ EV Inverter Market
"Today, inverters for EV powertrains either use IGBTs which are low cost but inefficient at light load conditions, or SiC devices which are very efficient but also expensive. Our new Combo ICeGaN ...