Researchers have realized a f_T/f_MAX 245GHz/450GHz SiGe:C heterojunction bipolar transistor (HBT) device, a key enabler for future high-volume ...

Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) represent a critical advancement in semiconductor technology, integrating a silicon base with germanium to markedly enhance frequency ...

Researchers at the University of Illinois at Urbana-Champaign have demonstrated the room-temperature operation of a heterojunction bipolar transistor laser, moving it an important step closer to ...

BAE Systems in the US has been working with Vitesse Semiconductor and the University of Illinois to design what they claim is one of the fastest semiconductor devices ever produced. Made using an ...

Researchers at the University of Illinois at Urbana-Champaign have demonstrated the room-temperature operation of a heterojunction bipolar transistor laser. "We have shown that the transistor laser, ...

Silicon germanium has been demonstrated at 798GHz fmax, exceeding the previous speed record for SiGe chips by around 200GHz, according to Georgia Tech, which was testing a transistor made by German ...

Indium Phosphide Heterojunction Bipolar Transistors are used in RF and mixed signal circuits operating at frequencies from below 10 GHz up to 0.2 THz. At these high frequencies, digital circuit blocks ...

Researchers in the US claim to have fabricated a transistor that bridges the worlds of optics and electronics. “We have demonstrated light emission from the base layer of a heterojunction bipolar ...

Austin, Texas — IBM Corp. and the Georgia Institute of Technology are testing the performance of silicon germanium transistors at temperatures near absolute zero. The work could aid efforts to create ...

CHAMPAIGN, Ill. -- A new type of transistor structure, invented by scientists at the University of Illinois at Urbana-Champaign, has broken the 600 gigahertz speed barrier. The goal of a terahertz ...