The MSK 0003 (B) is a FET input, high speed voltage follower/buffer amplifier. This device has wide bandwidth and is compatible with all other 0033 designs. The FET input is cascaded to force the ...

The RA280 integrated amplifier boasts 250-watts per channel using a unique combination of Class AD technology with GaN FETs. For 2024, HiFi Rose is offering a new integrated amplifier, the RA280 which ...

How a paper substrate and biodegradable circuitry can be used for basic circuits. How the researchers fabricated and connected active and passive devices literally “on paper.” Details of their first, ...

Here, a power amplifier circuit has been designed using MOSFET to produce 100 W output to drive a load of about 8 Ω. Here, a power amplifier circuit has been designed using MOSFET to produce 100 W ...

GaN Systems has extended its Class D GaN-powered Audio portfolio with two complete Class-D high-performance GaN FET amplifier boards and two complete audio boost converter solutions for marine, auto, ...

Gallium-nitride (GaN) FETs are becoming widely preferred in many products, from low power, low-cost applications such as smart device chargers all the way up to high power automotive applications.

CATALOG DESCRIPTION: Fundamental concepts in electronics. Diode, BJT and FET Circuits; design using ideal operational amplifiers; feedback; frequency response; biasing; current sources and mirrors; ...

Having become addicted to the works of Linear Tech apps engineer Jim Williams, I have learned to respect the addition of discrete transistors to op-amps to improve certain characteristics. Imagine my ...